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Authors: Yosuke Shimura, A. Srinivasan, D. Van Thourhout, Rik Van Deun, M. Pantouvaki, J. Van Campenhout, Roger Loo
Title: Low temperature in-situ P-doped Ge epitaxy using Ge2H6 in view of optical applications
Format: International Conference Proceedings
Publication date: 5/2015
Journal/Conference/Book: The 9th International Conference On Silicon Epitaxy And Heterostructures
Volume(Issue): p.91-92
Location: Montreal, Canada
Citations: Look up on Google Scholar
Download: Download this Publication (1.5MB) (1.5MB)

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