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Authors: Y. Hu, M. Pantouvaki, S. Brems, I. Asselberghs, C. Huyghebaert, M. Geisler, C. Alessandri, R. Baets, P. Absil, D. Van Thourhout, J. Van Campenhout
Title: Broadband 10Gb/s Graphene Electro-Absorption Modulator on Silicon for Chip-Level Optical Interconnects
Format: International Conference Proceedings
Publication date: 12/2014
Journal/Conference/Book: Electron Devices Meeting (IEDM)
Editor/Publisher: IEEE International, 
Location: San Francisco, United States
DOI: 10.1109/iedm.2014.7046991
Citations: 31 ( - last update: 7/7/2024)
22 (OpenCitations - last update: 27/6/2024)
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We report the first silicon integrated graphene optical
electro-absorption modulator capable of 10Gb/s modulation speed. We demonstrate low insertion loss and low drive voltage combined with broadband and athermal operation in a compact hybrid graphene-Si device, outperforming Si(Ge)optical modulators for future chip-level optical interconnect application.

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