| Authors: | S. Keyvaninia, S. Verstuyft, L. Van Landschoot, D. Van Thourhout, G. Roelkens, G. Duan, F. Lelarge, J.M. Fedeli, S. Messaoudene, T. De Vries, B. Smalbrugge, E.J. Geluk, J. Bolk, M.Smit | | Title: | Heterogeneously integrated III-V/silicon distributed feedback lasers | | Format: | International Journal | | Publication date: | 12/2013 | | Journal/Conference/Book: | Optics Letters
| | Editor/Publisher: | OSA, | | Volume(Issue): | 38(24) p.5434-5437 | | DOI: | 10.1364/ol.38.005434 | | Citations: | 102 (Dimensions.ai - last update: 21/12/2025)
88 (OpenCitations - last update: 27/6/2025)
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Abstract
Heterogeneously integrated III-V-on-silicon second order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel design exploiting high confinement in the active waveguide is demonstrated. 14mW output power coupled to a silicon waveguide, 50dB side mode suppression ratio and continuous wave operation up to 60°C is obtained. Related Research Topics
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