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Authors: Z. Wang, M. Pantouvaki, Mohan Paladugu, B. Tian, Richard Olivier, Bender Hugo, Clement Merckling, Weiming Guo, Johan Dekoster, Matty Caymax, J Van Campenhout, D. Van Thourhout
Title: High Quality InP Localized Growth on Silicon for Photonics Applications
Format: International Conference Presentation
Publication date: 8/2013
Journal/Conference/Book: Progress In Electromagnetics Research Symposium (PIERS 2013)
Volume(Issue): p.68
Location: Stockholm, Sweden
Citations: Look up on Google Scholar
Download: Download this Publication (220KB) (220KB)


Over the last decade, \silicon photonics" has evolved from a relatively new topic to
one of the most competitive research ¯eld. It holds great promises to many applications, such as
optical interconnects, sensing, and next generation commercial electronics. Great achievements
have been made, although the indirect bandgap nature of silicon hinders the realization of active
devices. Besides the e®orts of bonding IIIVs materials on silicon for active applications, the
possibility of integrating IIIVs on silicon in the epitaxy level reattracts enormous interests from
the material science society. In this work, we present recent results of localized InP growth on
exactly [001] oriented silicon substrate.

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