| Authors: | B. Tian, M. Paladugu, Z. Wang, P. Marianna, D. Van Thourhout | | Title: | Photoluminescence characterization of III-V materials epitaxially grown on silicon | | Format: | International Conference Proceedings | | Publication date: | 11/2012 | | Journal/Conference/Book: | Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Belenux Chapter
| | Volume(Issue): | p.247-250 | | Location: | Mons, Belgium | | Citations: | Look up on Google Scholar
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Abstract
Silicon photonics is widely adopted as a competitive candidate to meet the increasing interconnects demands of lCs. However, the key component - an efficient laser, is still missing due to its in.direct bandgap. The photonics group of Gent University is nowadays working with lMEC in developing an epitaxial method to integrate III-Vs on
silicon. To characterize the IIIV/Si material quality, a rnicro-PL setup, which has wide
range of pump intensity, is utilized. Measurement results how that different defects (threading dislocations, anti-phase boundaries) do influence the optical property of the material, and the overall material quality shows the potential for device demonstration. Related Research Topics
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