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Authors: W. Xie, M. Fiers, S. Selvaraja, J. Van Campenhout, P. Absil, D. Van Thourhout
Title: High-Q photonic crystal nanocavities on 300 mm SOI substrate fabricated by 193 nm immersion lithography
Format: International Conference Proceedings
Publication date: 11/2012
Journal/Conference/Book: Proceedings of the 2012 Annual Symposium of the IEEE Photonics Society Benelux Chapter
Editor/Publisher: Marc Wuilpart, Christophe Caucheteur, and Marilina Mura, 
Volume(Issue): p.183-186
Location: Mons, Belgium
Citations: Look up on Google Scholar
Download: Download this Publication (439KB) (439KB)


On-chip one-dimensional Photonic crystal nanocavities, with a design based on the mode-gap modulation approach, were fabricated in a 300mm silicon-on-insulator wafer using a CMOS-compatible process with 193nm immersion lithography. Characterization of the transmission spectrum shows that a high quality factor of 6.8×104 is achieved in these cavities. The dependence of the resonant mode wavelength and quality factor on the width of the cavity and the size of the holes was investigated by sweeping the width, and by scaling the radius of the holes, respectively. These on-chip nanocavities with high-Q, fabricated through a high-resolution and high-volume CMOS compatible platform provide promising opportunities for integrated photonic applications.

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