|Authors: ||S. Keyvaninia, S. Verstuyft, F. Lelarge, G.-H. Duan, S. Messaoudene , J.M. Fedeli, T. De Vries, B. Smalbrugge, J. Bolk, M. Smit, D. Van Thourhout, G. Roelkens|
|Title: ||Heterogeneously integrated III-V/Si single mode laser based on a MMI-ring combination and triplet-ring reflectors|
|Format: ||International Conference Proceedings|
|Publication date: ||4/2013|
|Journal/Conference/Book: ||SPIE Microtechnologies
|Editor/Publisher: ||SPIE , |
|Volume(Issue): || p.paper 8767-23|
|Location: ||Grenoble, France|
|Citations: ||3 (Dimensions.ai - last update: 29/1/2023)|
2 (OpenCitations - last update: 10/5/2023)
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In this paper we show that using a DVS-BCB adhesive bonding process compact heterogeneously integrated III-V/silicon single mode lasers can be realized. Two new designs were implemented: in a first design a multimode interference coupler (MMI) – ring resonator combination is used to provide a comb-like reflection spectrum, while in a second design a triplet-ring reflector design is used to obtain the same. A broadband silicon Bragg grating reflector is implemented on the other side of the cavity. The III-V amplifier is heterogeneously integrated on the 400nm thick silicon waveguide layer, which is compatible with high-performance modulator designs and allows efficient coupling to a standard 220nm high index contrast silicon waveguide layer. In order to make the mode coupling efficient, both the III-V waveguide and silicon waveguide are tapered, with a tip width for the III-V waveguide of around 500 nm. The III-V thin film optical amplifier is implemented as a 3 ìm wide mesa etched through to the n-type InP contact layer. In this particular device implementation the amplifier section was 500 ìm long.
A waveguide-coupled output power up to 5 mW at 20⁰C and a side mode suppression ratio of more than 40dB is realized.
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