| Authors: | A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, G. Roelkens | | Title: | GeSn/Ge heterostructure short-wave infrared photodetectors on silicon | | Format: | International Journal | | Publication date: | 8/2012 | | Journal/Conference/Book: | Optics Express
| | Volume(Issue): | 20(25) p.27297-27303 | | DOI: | 10.1364/oe.20.027297 | | Citations: | 181 (Dimensions.ai - last update: 21/12/2025)
104 (OpenCitations - last update: 10/5/2025)
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Abstract
A surface-illuminated photoconductive detector based on Ge0.9Sn0.1 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2ìm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications. Related Projects
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