| Authors: | A. Gassenq, N. Hattasan, E.M.P. Ryckeboer, J.B. Rodriguez, L. Cerutti, E. Tournié, G. Roelkens | | Title: | Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip | | Format: | International Journal | | Publication date: | 5/2012 | | Journal/Conference/Book: | Optics Express
| | Volume(Issue): | 20(11) p.11665-11672 | | DOI: | 10.1364/oe.20.011665 | | Citations: | 58 (Dimensions.ai - last update: 21/12/2025)
34 (OpenCitations - last update: 10/5/2025)
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Abstract
In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3ìm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2ìm. Related Projects
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