| Authors: | M. Pantouvaki, H. Yu, P. Verheyen, G. Lepage, W. Bogaerts, M. Moelants, J. Wouters, D. Radisic, A. Vandervorst, P. Absil, J. Van Campenhout | | Title: | Lateral versus interdigitated diode design for 10 Gb/s low-voltage low-loss silicon ring modulators | | Format: | International Conference Presentation | | Publication date: | 6/2012 | | Journal/Conference/Book: | IEEE Optical Interconnects Conference
| | Volume(Issue): | p.TuC4 | | Location: | Santa Fe, United States | | DOI: | 10.1109/oic.2012.6224455 | | Citations: | 3 (Dimensions.ai - last update: 21/12/2025)
3 (OpenCitations - last update: 10/5/2025)
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Abstract
Silicon ring modulators with interdigitated diodes are shown to support improved extinction ratios up to 7.5dB at 3 dB insertion loss with 1 Vpp at 10Gb/s, compared to the lateral diode design. Related Research Topics
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