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Authors: M. Tassaert, D. Van Thourhout, G. Roelkens
Title: Strategies to increase the modal gain in heterogeneously integrated III-V amplifiers on Silicon-On-Insulator
Format: International Journal
Publication date: 5/2011
Journal/Conference/Book: Optical and Quantum Electronics
Editor/Publisher: Springer, 
Volume(Issue): p.683-689
DOI: 10.1007/s11082-012-9588-6
Citations: 6 ( - last update: 7/7/2024)
4 (OpenCitations - last update: 3/5/2024)
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A novel waveguide shape is proposed to take advantage of the high index contrast in adhesively bonded III-V on Silicon-On-Insulator (SOI) waveguides for application in on-chip semiconductor optical amplifiers. By decreasing the effective index of the top contact layer, the confinement in the active region can be increased by 70%, boosting the achievable modal gain and reducing the required device length to achieve a certain gain. This technique could reduce the footprint of amplifiers, lasers and other active devices integrated on the SOI platform.

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