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Authors: S. Stankovic, G. Roelkens, D. Van Thourhout, R. Jones, M. Sysak, J. Heck
Title: 1310nm evanescent hybrid III-V/Si laser based on DVS-BCB bonding
Format: International Conference Proceedings
Publication date: 6/2011
Journal/Conference/Book: Integrated Photonics Research, Silicon and Nano-Photonics (IPR)
Editor/Publisher: Optical Society of America, 
Volume(Issue): p.IWC3
Location: Toronto, Canada
DOI: 10.1364/iprsn.2011.iwc3
Citations: 5 ( - last update: 7/7/2024)
4 (OpenCitations - last update: 3/5/2024)
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We present an evanescently-coupled, hybrid III-V/Silicon Fabry-Perot laser based on adhesive (DVS-BCB) bonding, operating at 1310 nm. Maximum optical power in a continuous-wave regime is 3 mW and the threshold current density is 2.41 kA/cm2.

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