| Authors: | S. Stankovic, G. Roelkens, D. Van Thourhout, R. Jones, M. Sysak, J. Heck | | Title: | 1310nm evanescent hybrid III-V/Si laser based on DVS-BCB bonding | | Format: | International Conference Proceedings | | Publication date: | 6/2011 | | Journal/Conference/Book: | Integrated Photonics Research, Silicon and Nano-Photonics (IPR)
| | Editor/Publisher: | Optical Society of America, | | Volume(Issue): | p.IWC3 | | Location: | Toronto, Canada | | DOI: | 10.1364/iprsn.2011.iwc3 | | Citations: | 5 (Dimensions.ai - last update: 21/12/2025)
4 (OpenCitations - last update: 3/5/2025)
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Abstract
We present an evanescently-coupled, hybrid III-V/Silicon Fabry-Perot laser based on adhesive (DVS-BCB) bonding, operating at 1310 nm. Maximum optical power in a continuous-wave regime is 3 mW and the threshold current density is 2.41 kA/cm2. Related Research Topics
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