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Authors: S. Stankovic, G. Roelkens, D. Van Thourhout, Jones, Richard, Sysak, Matt, Heck, John
Title: Evanescently-Coupled Hybrid III-V/Silicon Laser Based on DVS-BCB Bonding
Format: International Conference Proceedings
Publication date: 11/2010
Journal/Conference/Book: 15th Annual Symposium of IEEE Photonics Society Benelux Chapter
Editor/Publisher: IEEE Photonics Society Benelux Chapter, 
Volume(Issue): p.77-80
Location: Delft, Netherlands
Citations: Look up on Google Scholar
Download: Download this Publication (1.7MB) (1.7MB)


Hybrid III-V/Silicon lasers based on evanescent coupling are one of the most advanced and the most promising devices in the ongoing efforts to build an efficient light source on a silicon platform. Most of the recently reported devices are based on direct die-to-wafer bonding of III-V epitaxial layers to silicon waveguides, which might prove difficult to implement in an industrial-scale fabrication process. As an alternative approach, in this paper, we present an evanescently-coupled, hybrid III-V/silicon laser based on adhesive DVS-BCB bonding. The device layout, the fabrication process and the achieved results are presented and discussed.

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