| Authors: | P.R.A. Binetti, X.J.M. Leijtens, T. De Vries, Y.S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P.J. van Veldhoven, R. Noetzel, M.K. Smit | | Title: | InP/InGaAs Photodetector on SOI Circuitry | | Format: | International Conference Proceedings | | Publication date: | 9/2009 | | Journal/Conference/Book: | 6th IEEE International Conference on Group IV Photonics
| | Volume(Issue): | p.FA7 | | Location: | San Francisco, United States | | DOI: | 10.1109/group4.2009.5338390 | | Citations: | 8 (Dimensions.ai - last update: 28/12/2025)
4 (OpenCitations - last update: 3/5/2025)
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Abstract
We present the design, fabrication and characterization
of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Related Research Topics
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