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Authors: J. Schrauwen, E.J. Klein, F. Ay, W.C.L. Hopman, R.M. De Ridder, D. Van Thourhout, R. Baets
Title: Reducing optical losses in focused-ion-beam etched silicon by annealing
Format: International Conference Poster
Publication date: 5/2008
Journal/Conference/Book: EIPBN
Location: United States
Citations: Look up on Google Scholar
Download: Download this Publication (357KB) (357KB)


Focused-ion-beam (FIB) is an interesting alternative for prototyping of photonic components because it can directly etch a semiconductor and reach feature sizes <50 nm. However, silicon exhibits high optical losses after FIB etching. We propose two techniques to reduce these losses: high temperature annealing and iodine enhanced FIB etching.

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