Photonics Research Group Home
Ghent University Journals/Proceedings
About People Research Publications Education Services


Publication detail

Authors: J. Schrauwen, D. Van Thourhout, R. Baets
Title: Trimming of silicon ring resonator by electron beam induced compaction and strain
Format: International Journal
Publication date: 3/2008
Journal/Conference/Book: Optics Express
Volume(Issue): 16(6) p.3738-3743
DOI: 10.1364/oe.16.003738
Citations: 119 ( - last update: 14/7/2024)
85 (OpenCitations - last update: 3/5/2024)
Look up on Google Scholar
Download: Download this Publication (727KB) (727KB)


Silicon is becoming the preferable platform for future integrated components, mostly due to the mature and reliable fabrication capabilities of electronics industry. Nevertheless, even the most advanced fabrication technologies suffer from non-uniformity on wafer scale and on chip scale, causing variations in the critical dimensions of fabricated components. This is an important issue since photonic circuits, and especially cavities such as ring resonators, are extremely sensitive to these variations. In this paper we present a way to circumvent these problems by trimming using electron beam induced compaction of oxide in silicon on insulator. Volume compaction of the oxide cladding causes both changes in the refractive index and creates strain in the silicon lattice. We demonstrate a resonance wavelength red shift 4.91 nm in a silicon ring resonator.

Related Research Topics

Citations (OpenCitations)

Back to publication list