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Authors: J. Schrauwen, D. Van Thourhout, R. Baets
Title: Iodine enhanced focused-ion-beam etching of silicon for photonic applications
Format: International Journal
Publication date: 11/2007
Journal/Conference/Book: Journal of applied physics
Volume(Issue): 102 p.103104
DOI: 10.1063/1.2815664
Citations: 11 ( - last update: 26/11/2023)
7 (OpenCitations - last update: 3/5/2023)
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Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and
nanophotonic devices. However, large optical losses due to crystal damage and ion implantation
enhancement, followed by baking at 300 °C. The excess optical loss in the silicon waveguides
drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after
bakingat300 °C.Wepresentelementalandchemicalsurfaceanalysessupportingthatthisiscaused
by the desorption of iodine from the silicon surface. Finally we present a model to extract the
absorption coefficient from the measurements.

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