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Authors: J. Schrauwen, E. Klein, R. De Ridder, W. Hopman, D. Van Thourhout, R. Baets
Title: Reducing optical losses in focused-ion-beam etched silicon by annealing
Format: International Conference Presentation
Publication date: 9/2007
Journal/Conference/Book: ePIXnet annual meeting 2007 (invited)
Location: Valencia, Spain
Citations: Look up on Google Scholar
Download: Download this Publication (1.5MB) (1.5MB)


Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and nanophotonic devices. However, large optical losses due to crystal damage and ion implantation make the devices unpracticable when the optical mode is confined near the etched region. One of the goals of the JRA FIB for Photonics is to investigate the methods for reducing these optical losses: out-diffusion of contaminants and material regeneration by high temperature annealing, focused-ion-beam etching with chemical enhancement, and dry etching of damaged silicon layers. A close collaboration between MESA+ in the Netherlands and IMEC in Belgium has yielded some first results supporting that all three the proposed techniques succeed in greatly reducing the experimentally measured excess losses in both single and multimode waveguides. This opens up many perspectives for fast prototyping of devices with 3D geometry, cavity trimming, slanted facet etching, and much more.

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