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Authors: J. Van Campenhout, P. Rojo Romeo, D. Van Thourhout, C. Seassal, P. Regreny, L. Di Cioccio, J.-M. Fedeli, R. Baets
Title: Thermal Characterization of Electrically Injected Thin-Film InGaAsP Microdisk Lasers on Si
Format: International Journal
Publication date: 6/2007
Journal/Conference/Book: Journal of Lightwave Technology
Volume(Issue): 25(6) p.1543-1548
DOI: 10.1109/jlt.2007.895552
Citations: 36 ( - last update: 21/7/2024)
23 (OpenCitations - last update: 3/5/2024)
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We have performed a numerical and experimental analysis of the thermal behavior of electrically injected microdisk lasers that are defined in an InGaAsP-based thin film bonded on top of a silicon wafer. Both the turn-on as well as the pulsed-regime
temperature evolution in the lasing region was simulated using the finite-element method. The simulation results are in good agreement with experimental data, which was extracted from
the broadening of the time-averaged emission spectra. Lasing at room temperature was only possible in pulsed regime due to the high thermal resistance (10 K/mW). Some strategies to decrease the thermal resistance of the microdisk lasers are proposed and

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