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Authors: J. Brouckaert, G. Roelkens, D. Van Thourhout, R. Baets
Title: Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs
Format: International Journal
Publication date: 4/2007
Journal/Conference/Book: Journal of Lightwave Technology
Editor/Publisher: IEEE/OSA, 
Volume(Issue): 25(4) p.1053-1060
DOI: 10.1109/jlt.2007.891172
Citations: 61 ( - last update: 14/7/2024)
36 (OpenCitations - last update: 3/5/2024)
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We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic silicon-on-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bonding unprocessed III–V dies onto the SOI substrate using an intermediate adhesive layer. Both benzocyclobutene and spin-on-glass are studied and compared as bonding agents. After the removal of the III–V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of InP/InGaAsP laser diodes on SOI. A new design of an evanescently coupled metal–semiconductor–metal detector is proposed, proving the ability to obtain compact and highly efficient integrated InGaAs photodetectors.

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