| Authors: | T.K. Liang, L.R. Nunes, M. Tuschiya, K.S. Abedin, T. Miyazaki, D. Van Thourhout, W. Bogaerts, P. Dumon, R. Baets, H.K. Tsang | | Title: | High speed logic gate using two-photon absorption in Silicon waveguides | | Format: | International Journal | | Publication date: | 9/2006 | | Journal/Conference/Book: | Optics Communications
| | Editor/Publisher: | Elsevier, | | Volume(Issue): | 265(1) p.171-174 | | DOI: | 10.1016/j.optcom.2006.03.031 | | Citations: | 93 (Dimensions.ai - last update: 21/12/2025)
67 (OpenCitations - last update: 3/5/2025)
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Abstract
The switching speed of conventional silicon-based optical switching devices based on plasma dispersion effect is limited by the lifetime of free carriers which introduce either phase or absorption changes. Here we report an all-optical logic NOR gate which does not rely on free carriers but instead uses two-photon absorption. High speed operation was achieved using pump induced non-degenerate two-photon absorption inside the submicron size silicon wire waveguides. The device required low pulse energy (few pJ) for logic gate operation. Related Research Topics
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