|Authors: ||D. Maes, Q. Hu, R. Borkowski, Y. Lefevre, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken|
|Title: ||High-Bandwidth Photodiodes on Silicon Nitride Supporting Net Bitrates in Excess of 350 Gbit/s|
|Format: ||International Conference Proceedings|
|Publication date: ||Accepted for publication. Not yet published|
|Journal/Conference/Book: ||European Conference on Optical Communication
|Location: ||Basel, Switzerland|
|Citations: ||Look up on Google Scholar
Silicon-nitride-based integrated photonic platforms currently lack fast photodiodes, limiting its adoption for high-speed optical transceivers. We show uni-traveling-carrier (UTC) photodiodes heterogeneously integrated by means of micro-transfer-printing and demonstrate their excellent bandwidth performance at 1550 nm, achieving net bit rates in excess of 350 Gbit/s.