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Authors: E. Soltanian, M. Billet, A. Hermans, B. Kuyken, J. Zhang, G. Roelkens
Title: Micro-Transfer-Printed III-V-on-Si Semiconductor Optical Amplifiers with High Saturation Power
Format: International Conference Proceedings
Publication date: 11/2022
Journal/Conference/Book: Annual Symposium of the IEEE Photonics Society Benelux Chapter
Editor/Publisher: IEEE, 
Volume(Issue): 26 p.201-204
Location: Eindhoven , Netherlands
Online: https://www.aanmelder.nl/ieee-ps-benelux-2022/wiki/734993/new-proceedings
Citations: Look up on Google Scholar
Download: Download this Publication (49.3MB) (49.3MB)

Abstract

Integrated III-V-on-Si high saturation power semiconductor optical amplifiers (SOAs) with high output power are essential for silicon photonics (SiPh) as the leading candidate for high volume production of photonic integrated circuits (PICs) in a wide variety of applications and markets such as coherent optical communications, sensing and spectroscopy, and LiDAR. InP-based SOAs with high optical confinement can suffer from two-photon absorption and non-linear absorption associated with the generated carriers, while in this work, we used pre-fabricated InP SOAs, micro-transfer-printed (uTP) on a silicon waveguide within a silicon on-insulator (SOI) PIC. The hybrid III-V/Si optical mode reduces confinement in the active region of the SOA, which results in an increased saturation power. The possibility of co-integration of high saturation power SOAs with the previously demonstrated uTP narrow linewidth widely tunable III-V-on-silicon lasers as optical output power boosters can lead to the required high output power of coherent optical communications. At the conference, we will present further details on the design, fabrication, and characterization results of the SOAs.

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