| Authors: | J. Zhang, L. Bogaert, B. Haq, R. Wang, B. Matuskova, J. Rimbock, S. Ertl, A. Gocalinska, E. Pelucchi, B. Corbett, J. Van Campenhout, G. Lepage, P. Verheyen, G. Morthier, G. Roelkens | | Title: | III-V-on-Si DFB laser with co-integrated booster realised using micro-transfer printing | | Format: | International Journal | | Publication date: | 9/2022 | | Journal/Conference/Book: | IEEE Photonics Technology Letters
| | Volume(Issue): | 35(11) p.593 - 596 | | DOI: | 10.1109/LPT.2023.3263279 | | Citations: | 2 (Dimensions.ai - last update: 14/4/2024)
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Abstract
A C-band III-V-on-Si distributed feedback (DFB) laser with co-integrated power amplifier was realized using micro-transfer printing. The DFB laser exhibits single mode operation around 1540 nm at 20 °C. By driving the DFB laser and co-integrated power amplifier simultaneously, up to 14 dBm waveguide-coupled output power with over 28 dB side mode suppression ratio was achieved at an overall bias current of 270 mA. Related Research Topics
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