| Authors: | D. Maes, L. Reis, S. Poelman, E. Vissers, V. Avramovic, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken | | Title: | High-Speed Photodiodes on Silicon Nitride with a Bandwidth beyond 100 GHz | | Format: | International Conference Proceedings | | Publication date: | 5/2022 | | Journal/Conference/Book: | Conference on Lasers and Electro-Optics (CLEO)
| | Location: | San Jose, United States | | DOI: | 10.1364/CLEO_SI.2022.SM3K.3 | | Citations: | 6 (Dimensions.ai - last update: 29/6/2025)
3 (OpenCitations - last update: 11/11/2025)
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Abstract
Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0.45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms. Related Research Topics
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