Authors:	D. Maes, L.N Reis, S. Poelman, E. Vissers, V. Avramovic, G. Roelkens, S. Lemey, E. Peytavit, B. Kuyken
Title:	High-Speed Photodiodes on Silicon Nitride with a Bandwidth beyond 100 GHz
Format:	International Conference Proceedings
Publication date:	5/2022
Journal/Conference/Book:	Conference on Lasers and Electro-Optics (CLEO)
Location:	San Jose, United States
DOI:	10.1364/CLEO_SI.2022.SM3K.3
Citations:	1 (Dimensions.ai - last update: 29/1/2023) Look up on Google Scholar
Download:	(10MB)

Abstract

Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0.45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.