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Authors: J. Goyvaerts, S. Kumari, S. Uvin, J. Zhang, R. Baets, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens
Title: Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
Format: International Journal
Publication date: 7/2020
Journal/Conference/Book: Optics Express
Volume(Issue): 28(14) p.21275-21285
DOI: 10.1364/OE.395796
Citations: 25 ( - last update: 16/6/2024)
1 (OpenCitations - last update: 19/4/2024)
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We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.

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