Authors: | J. Goyvaerts, S. Kumari, S. Uvin, J. Zhang, R. Baets, A. Gocalinska, E. Pelucchi, B. Corbett, G. Roelkens | Title: | Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications | Format: | International Journal | Publication date: | 7/2020 | Journal/Conference/Book: | Optics Express
| Volume(Issue): | 28(14) p.21275-21285 | DOI: | 10.1364/OE.395796 | Citations: | 28 (Dimensions.ai - last update: 29/9/2024) 21 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract
We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform. Related Research Topics
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