|Authors: ||N. Ye, G. Muliuk, J. Zhang, A. Abbasi, D. Van Thourhout, G. Roelkens|
|Title: ||Transfer Print Integration of Waveguide-Coupled Germanium Photodiodes onto Silicon Photonics ICs|
|Format: ||International Journal|
|Publication date: ||Accepted for publication. Not yet published|
|Journal/Conference/Book: ||IEEE Journal of Lightwave Technology
We demonstrate the integration of waveguide-coupled germanium photodiodes onto passive silicon waveguide circuits by means of transfer printing. This involves the release of the photodiodes from the silicon-on-insulator source wafer by underetching the buried oxide layer, while at the same time protecting the back-end stack. Tethers were formed to keep the released photodiode coupons in place. Coupons were then transfer printed to a silicon photonic target wafer with an alignment accuracy better than ±1 micrometer. 0.66 A/W waveguide-referred photodiode responsivity at 1550 nm was obtained. High speed measurements yielded open eye diagrams at 40 Gbit/s.
Back to publication list