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Authors: Y. Yamamoto, L-W. Nien, G. Capellini, M. Virfilio, I. Costina, M. A. Schubert, W. Seifert, A. Srinivasan, R. Loo, G. Scappucci, D. Sabbagh, A. Hesse, J. Murota, T. Schroeder, B. Tillack
Title: Photoluminescence of phosphorus atomic layer doped Ge grown on Si
Format: International Journal
Publication date: 12/2016
Journal/Conference/Book: Semiconductor Science and Technology
Volume(Issue): p.104005 (6 pages)
DOI: 10.1088/1361-6641/aa8499
Citations: 1 (Dimensions.ai - last update: 29/5/2022)
1 (OpenCitations - last update: 19/4/2022)
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Abstract

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm−2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm−3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm−3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ~0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ~2 × 1019 cm−3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

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