Authors: | J. Verbist, J. Lambrecht, B. Moeneclaey, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Roelkens | Title: | 40-Gb/s PAM-4 Transmission over 40 km using an O-band EML and a sub-5V Silicon Germanium APD | Format: | International Journal | Publication date: | 6/2017 | Journal/Conference/Book: | IEEE Photonics Technology Letters
| Volume(Issue): | p.2238-2241 | DOI: | 10.1109/LPT.2017.2757608 | Citations: | 9 (Dimensions.ai - last update: 8/12/2024) 9 (OpenCitations - last update: 27/6/2024) Look up on Google Scholar
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Abstract
Avalanche photodetectors (APDs) integrated in a silicon platform have the potential to significantly improve the link budget of optical interconnects compared to conventional p i n photodetectors, while only requiring CMOS-friendly biasing voltages. We demonstrate an optical receiver based on a 1310 nm < 5V Germanium APD and a low-power transimpedance amplifier that offers a 5-to-6dB sensitivity improvement compared to operation in PIN-mode. Sub-FEC transmission in an amplifier-less link over more than 42 km at 40 Gb/s and over more than 10 km at 50 Gb/s is shown with a commercial electro-absorption modulated laser as transmitter. Related Research Topics
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