|Authors: ||J. Verbist, J. Lambrecht, B. Moeneclaey, J. Van Campenhout, X. Yin, J. Bauwelinck, G. Roelkens|
|Title: ||40-Gb/s PAM-4 Transmission over 40 km using an O-band EML and a sub-5V Silicon Germanium APD |
|Format: ||International Journal|
|Publication date: ||6/2017|
|Journal/Conference/Book: ||IEEE Photonics Technology Letters
Avalanche photodetectors (APDs) integrated in a silicon platform have the potential to significantly improve the link budget of optical interconnects compared to conventional p i n photodetectors, while only requiring CMOS-friendly biasing voltages. We demonstrate an optical receiver based on a 1310 nm < 5V Germanium APD and a low-power transimpedance amplifier that offers a 5-to-6dB sensitivity improvement compared to operation in PIN-mode. Sub-FEC transmission in an amplifier-less link over more than 42 km at 40 Gb/s and over more than 10 km at 50 Gb/s is shown with a commercial electro-absorption modulated laser as transmitter.
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