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Authors: A. Bazin, R. Van Laer, B. Kuyken, R. Baets, D. Van Thourhout
Title: Net on-chip Brillouin continuous wave gain based on suspended silicon photonic nanowires
Format: International Conference Presentation
Publication date: 2/2016
Journal/Conference/Book: SPIE Photonic West 2016
Location: San Francisco, United States
Internal Reference: [N-1853]
Download: Download this Publication (157KB) (157KB)

Abstract

The past years have seen a renewed attention dedicated to engineer nanostructures with a large phonon-photon coupling. The Silicon-On-Insulator (SOI) platform is an exciting platform for high-density optomechanical circuitry. In this work, significant progress on Stimulated Brillouin Scattering on SOI chips is reported. We show Brillouin gain exceeding the optical losses in a series of suspended silicon nanowires, with up to 0.5dB net gain. Moreover, no evidence of gain saturation is seen at power flux of 0.4W/┬Ám2. We obtain a gain coefficient up to 9000/(W.m), the highest efficiency to date in the phononic gigahertz range.

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