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Authors: E. P. Haglund, S. Kumari, J. Gustavsson, P. Westbergh, G. Roelkens, R. Baets, A.Larsson
Title: Dynamic Properties of Silicon Integrated Short Wavelength Hybrid Cavity VCSEL
Format: International Conference Proceedings
Publication date: 2/2016
Journal/Conference/Book: SPIE Photonics West , United States
Volume(Issue): 9766 p.976607
Location: San Francisco,
Internal Reference: [N-1850]
Download: Download this Publication (4.9MB) (4.9MB)

Abstract

We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs “half-VCSEL” is attached to a

silicon-based dielectric distributed Bragg reflector using ultra-thin divinylsiloxane-bis-benzocyclobutene

(DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs-

and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 7 µm and a threshold

current of 0.7 mA provides 1.5 mW output power at 844 nm. With sufficient damping of the modulation

response, set by the photon lifetime, the VCSEL exhibits a modulation bandwidth >10 GHz and can

transmit data up to 15

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