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Authors: A. Malik, M. Muneeb, S. Radosavljevic, M. Nedeljkovic, J. Penades, G. Mashanovich, Y. Shimura, G. Lepage, P. Verheyen, W. Vanherle, T. Van Opstal, R Loo, J. Van Campenhout, G. Roelkens
Title: Silicon-based photonic integrated circuits for the mid-infrared
Format: International Journal
Publication date: 3/2016
Journal/Conference/Book: Procedia Engineering (invited)
Editor/Publisher: Elsevier, 
Volume(Issue): 140 p.144-151
Internal Reference: [N-1825]
DOI:
Download: Download this Publication (1.1MB) (1.1MB)

Abstract

Silicon-based photonic integrated circuits (PICs) operating in the mid-infrared wavelength range are presented. Firstly, it is shown that the operation of the SOI-based waveguide circuits can be pushed beyond the telecom window till a wavelength of 4 μm. Ge-on-Si based PICs are demonstrated for operation beyond 4 μm wavelength. Low-loss waveguides and integrated
spectrometers are reported for both the waveguide platforms. We also present our results on efficient thermo-optic phase shifters for germanium waveguide circuits.

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