In this letter, we report a novel high-index-contrast silicon nitride arrayed waveguide grating (AWG) for very nearinfrared wavelengths. This device is fabricated through a process compatible with a complementary metal-oxide-semiconductor (CMOS) fabrication line and is therefore suitable for massfabrication. The large phase errors that usually accompany highindex- platform AWGs are partly mitigated through design and fabrication adaptions, in particular the implementation of a twolevel etch scheme. Multiple devices are reported, among which a 0.3 mm2 device which, after subtraction of waveguides loss, has a -1.2 dB on-chip insertion loss at the peak of the central channel and 20 dB crosstalk for operation around 900 nm with a channel spacing of 2 nm. These AWGs pave the way for numerous largescale on-chip applications pertaining to spectroscopy and sensing.
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