| Authors: | P. Pal, G. Morthier | | Title: | Investigation of Carbon Doped Amorphous Silicon, an Alternative Material for All-Optical S ignal Processing for On-Chip SOI PICs | | Format: | International Conference Proceedings | | Publication date: | 11/2013 | | Journal/Conference/Book: | Proceedings of the 18th Annual Symposium of the IEEE Photonics Society Benelux Chapter
| | Volume(Issue): | p.163-166 | | Location: | Eindhoven, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
We investigate the properties of carbon-doped hydrogenated amorphous silicon (a-SixC1-x:H) thin-films produced by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) under low temperature condition, and compare them with those of non-carbon-doped amorphous silicon. Spectroscopic ellipsometry (SE) analysis has been used to characterise the deposited thin-films. During deposition argon gas has been used for passivation with different dilution ratio. The deposition temperature, dilution ratio and rf-power are important parameters that influence both the hydrogen content and the optical band gap. Optical multimode waveguides have been fabricated with this material on an SOI wafer and have been characterised. Related Research Topics
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