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Authors: B. Tian, Z. Wang, D. Van Thourhout, M. Pantouvaki, W. Guo, Merckling Clement, J Van Campenhout
Title: InP Nanowire lasers Epitaxially Grwon on (001) Silicon ‘V- groove’ templates
Format: International Conference Presentation
Publication date: 5/2014
Journal/Conference/Book: International Conference on Indium Phosphide and Related Materials(IPRM) 2014
Citations: Look up on Google Scholar
Download: Download this Publication (293KB) (293KB)

Abstract

In this work, we demonstrated an ultra-low threshold
nanowire laser that is monolithically integrated on (001) silicon
substrate. By using a V-groove template, we were able to reduce
the laser threshold one order of magnitude (0.19pJ per pulse)
compared with the last generation, and the yielding throughout
the sample has also been increased dramatically.

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