Authors:	L. Li, Y. Li, G. Morthier
Title:	Properties of shallowly etched second order grating in silicon-on-insulator (SOI) waveguide
Format:	International Workshop
Publication date:	5/2013
Journal/Conference/Book:	2013 Annual Workshop of the IEEE Photonics Benelux Chapter
Editor/Publisher:	Vincent Ginis, Mulham Khoder, Lieve Lambrechts & Philippe Tassin,
Volume(Issue):	p.23-24
Location:	Brussels , Belgium
Citations:	Look up on Google Scholar
Download:	(268KB)

Abstract

The reflection, transmission and radiation spectra of the shallowly etched second order gratings in silicon-on-insulator (SOI) waveguide are simulated using the FDTD method. The influence of the grating duty cycle and the buried oxide layer are analyzed. The first order gratings are also calculated for comparison.