Authors:	A. Subramanian, S. Selvaraja, P. Verheyen, A. Dhakal, K. Komorowska, R. Baets
Title:	Near infrared grating couplers for silicon nitride photonic wires
Format:	International Journal
Publication date:	10/2012
Journal/Conference/Book:	IEEE Photonics Technology Letters
Volume(Issue):	24(19) p.1700-1703
DOI:	10.1109/LPT.2012.2212881
Citations:	44 (Dimensions.ai - last update: 8/12/2024) 29 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
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Abstract

Silicon nitride (Si3N4) is a promising high index material for dense photonic circuits in the visible-mid infrared photonic applications. Experimental results are presented for the first time for linear and focused grating couplers at near infrared wavelength (around 900nm) for PECVD Si3N4 wires (220 nm × 500 nm). An efficiency of (6.2 dB, 6.5 dB) and 1 dB bandwidth of (26 nm, 40 nm) is reported for the linear and focused grating couplers respectively.

Related Research Topics

• High efficiency fiber-to-waveguide grating coupler structures (2008-2015)
• Siliconnitride photonic integrated circuit platform

Related Projects

• ERC-AdG: InSpectra (Silicon-photonics-based laser spectroscopy platform: towards a paradigm shift in environmental monitoring and health care)