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Authors: M. Aamer, A. Gutierrez, A. Brimont, D. Vermeulen, G. Roelkens, J.M. Fedeli, A. Hakansson, P. Sanchis
Title: A CMOS compatible SOI polarization rotator based on symmetry breaking of the waveguide cross section
Format: International Journal
Publication date: 7/2012
Journal/Conference/Book: Photonics Technology Letters
Volume(Issue): p.2031-2034
Internal Reference: [N-1350]
Download: Download this Publication (411KB) (411KB)

Abstract

A polarization rotator in silicon-on-insulator
technology based on breaking the symmetry of the waveguide cross section is reported. The 25-ìm-long device is designed to be integrated with standard grating couplers without the need for extra fabrication steps. Hence, fabrication is carried out by a 2-etch-step complementary metal–oxide–semiconductor compatible process using 193-nm deep ultraviolet lithography. A polarization conversion efficiency of more than −0.85 dB with insertion losses ranging from −1 to −2.5 dB over a wavelength
range of 30 nm is demonstrated.


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