Authors:	H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, W. Bogaerts
Title:	Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators
Format:	International Journal
Publication date:	6/2012
Journal/Conference/Book:	Optics express
Volume(Issue):	20(12) p.12926-12938
DOI:	10.1364/oe.20.012926
Citations:	110 (Dimensions.ai - last update: 6/10/2024) 71 (OpenCitations - last update: 10/5/2024) Look up on Google Scholar
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Abstract

Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform the lateral diode in achieving a low VðLð of 0.62 V∙cm with comparable propagation loss at the expense of a higher depletion capacitance. The low VðLð of the interdigitated PN junction is employed to demonstrate 10 Gbit/s modulation with 7.5 dB extinction ration from a 500 µm long device whose static insertion loss is 2.8 dB. In addition, a traveling wave electrode co-designed with the lateral diode is demonstrated for up to 40 Gbit/s from a 3 mm long device.

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• All-Silicon Modulators