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Authors: M. Tassaert, H.J.S Dorren, G. Roelkens, O. Raz
Title: Passive InP regenerator integrated on SOI for the support of broadband silicon modulators
Format: International Journal
Publication date: 5/2012
Journal/Conference/Book: Optics Express
Editor/Publisher: Optical Society of America, 
Volume(Issue): 20(10) p.11383-11388
DOI: 10.1364/oe.20.011383
Citations: 9 ( - last update: 21/7/2024)
9 (OpenCitations - last update: 3/5/2024)
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Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is proposed.

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