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Authors: N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, G. Roelkens
Title: Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit
Format: International Journal
Publication date: 12/2011
Journal/Conference/Book: IEEE Photonics Technology Letters
Volume(Issue): 23(2011) p.1760
Internal Reference: [N-1195]
DOI:
Download: Download this Publication (425KB) (425KB)

Abstract

We report the integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit. The device operates with low dark current (1.13µA at -0.1V) at room temperature. A high responsivity of 0.44A/W is measured at 2.29 µm. This yields 1.63x109 cmHz1/2/W of Johnson-noise-limited-detectivity.

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