| Authors: | S. Stankovic, G. Roelkens, D. Van Thourhout, Jones, Richard, Sysak, Matt, Heck, John | | Title: | Evanescently-Coupled Hybrid III-V/Silicon Laser Based on DVS-BCB Bonding | | Format: | International Conference Proceedings | | Publication date: | 11/2010 | | Journal/Conference/Book: | 15th Annual Symposium of IEEE Photonics Society Benelux Chapter
| | Editor/Publisher: | IEEE Photonics Society Benelux Chapter, | | Volume(Issue): | p.77-80 | | Location: | Delft, Netherlands | | Citations: | Look up on Google Scholar
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Abstract
Hybrid III-V/Silicon lasers based on evanescent coupling are one of the most advanced and the most promising devices in the ongoing efforts to build an efficient light source on a silicon platform. Most of the recently reported devices are based on direct die-to-wafer bonding of III-V epitaxial layers to silicon waveguides, which might prove difficult to implement in an industrial-scale fabrication process. As an alternative approach, in this paper, we present an evanescently-coupled, hybrid III-V/silicon laser based on adhesive DVS-BCB bonding. The device layout, the fabrication process and the achieved results are presented and discussed. Related Research Topics
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