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Authors: S. Stankovic, G. Roelkens, D. Van Thourhout, R. Baets, R. Jones, M. Sysak, B. Koch
Title: Hybrid III-V/Silicon laser based on DVS-BCB bonding
Format: International Conference Poster
Publication date: 11/2008
Journal/Conference/Book: 13th Annual Symposium of the IEEE/LEOS Benelux Chapter
Volume(Issue): p.139-142
Location: Enschede, Netherlands
Internal Reference: [N-804]
Download: Download this Publication (138KB) (138KB)

Abstract

Recent years have witnessed an increasing research interest in hybrid lasers based on evanescent coupling between III-V materials and silicon waveguides. Recently reported state-of-the-art devices utilize molecular die-to-wafer bonding of III-V epitaxial layers to silicon waveguides, which imposes strict requirements on the cleanliness and quality of the bonded surfaces. In this paper, we propose a hybrid III-V/silicon laser based on adhesive DVS-BCB bonding providing less strict surface quality requirements and a fabrication procedure suitable for large-scale production. The general layout of the device and its simulated properties are presented and discussed.

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