| Authors: | J. Schrauwen, D. Van Thourhout, R. Baets | | Title: | Iodine enhanced focused-ion-beam etching of silicon for photonic applications | | Format: | International Journal | | Publication date: | 11/2007 | | Journal/Conference/Book: | Journal of applied physics
| | Volume(Issue): | 102 p.103104 | | DOI: | 10.1063/1.2815664 | | Citations: | 11 (Dimensions.ai - last update: 14/4/2024)
7 (OpenCitations - last update: 3/5/2024)
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Abstract
Focused-ion-beam etching of silicon enables fast and versatile fabrication of micro- and
nanophotonic devices. However, large optical losses due to crystal damage and ion implantation
makethedevicesimpracticalwhentheopticalmodeisconfinedneartheetchedregion.Theselosses
areshowntobereducedbythelocalimplantationandetchingofsiliconwaveguideswithiodinegas
enhancement, followed by baking at 300 °C. The excess optical loss in the silicon waveguides
drops from 3500 to 1700 dB/cm when iodine gas is used, and is further reduced to 200 dB/cm after
bakingat300 °C.Wepresentelementalandchemicalsurfaceanalysessupportingthatthisiscaused
by the desorption of iodine from the silicon surface. Finally we present a model to extract the
absorption coefficient from the measurements. Related Research Topics
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