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Authors: F. Lelarge, B. Dagens, C. Cuisin, O. Le Gouezigou, G. Patriarche, W. Van Parys, M. Vanwolleghem, R. Baets, J.L. Gentner
Title: GSMBE growth of GaInAsP/InP 1.3 ìm-TM-lasers for monolithic integration with optical waveguide isolator
Format: International Journal
Publication date: 5/2005
Journal/Conference/Book: Journal of Crystal Growth
Volume(Issue): 278(1-4) p.709-713
Internal Reference: [N-387]
Download: Download this Publication (298KB) (298KB)

Abstract

The GSMBE growth of GaInAsP/InP 1.3-ìm-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-ìm-GaInAsP:Be contacting layers provide a good electrical contact between the III–V semiconductor and the ferromagnetic metal is reported. The GSMBE growth of strain-compensated GaInAsP multiple-quantum wells (QWs) allows one to stack up to fifteen 12-nm-thick −1.1% tensile-strained QWs. Broad area TM-lasers with threshold a current density of 0.8k A/cm2 and characteristic temperature of 75 K (in the range of 20–80 °C) are obtained for 600 ìm-long lasers comprising 6 QWs. The possible wavelength extension of TM lasers to 1.55-ìm is also discussed.

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