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Authors: R. Baets, D. Delbeke, R. Bockstaele, P. Bienstman
Title: Resonant-cavity light-emitting diodes: a review
Format: International Conference Proceedings
Publication date: 1/2003
Journal/Conference/Book: Proceedings of SPIE (invited)
Volume(Issue): 4996 p.74-86
Location: San Jose , California, United States
Internal Reference: [N-234]
Download: Download this Publication (882KB) (882KB)

Abstract

An overview of planar resonant-cavity ligth-emitting diodes. Letting spontaneous emission happen in a planar cavity will in the first place affect the extraction efficiency. The internal intensity distribution is not longer isotropic due to interference effects (or density of states effects). The basics of dipole emission in planar cavities will be shortly reviewed using a classical approach valid in the so called weak-coupling regime. The total emission enhancement or Purcell factor, although small in planar cavities, will be explained. The design of a GaAs/AIGaAs RCLED is discussed. We review the state-of-the-art devices in different semiconductor material systems and at different wavelengths. Some advanced techniques based on gratings or photonic crystals to improve the efficiency of these devices are discussed. RCLEDs are not the only candidates that can be used as hogh-efficiency ligth source in communication and non-communication applications. They compete with other high-efficiency LEDs and with VCSELs. The future prospects of RCLEDs are discussed in view of this competition.


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